Gas Tholin From N₂:CH₄:H₂:C₂H₂:C₂H₄:HC₃N (0.98:0.018:0.002:3.5E-5:3.0E-5:1.7E-6) at 297 K
| Sample Type | Gas Tholin |
|---|---|
| Components | N₂:CH₄:H₂:C₂H₂:C₂H₄:HC₃N |
| Ratio | 0.98:0.018:0.002:3.5E-5:3.0E-5:1.7E-6 |
| Substrate | Si |
| Reference Temperature | 297 K |
| Wavenumber (cm⁻¹) | 13333.333 - 25000 |
| Wavelength (µm) | 0.4 - 0.75 |
Titan gas tholin sample produced from nitrogen:methane:hydrogen:acetylene:ethylene:cyanoacetylene (N₂:CH₄:H₂:C₂H₂:C₂H₄:HC₃N with a 0.98:0.018:0.002:3.5E-5:3.0E-5:1.7E-6 ratio) gas precursors by UV photolysis at 297 K temperature and ~700 Torr pressure at Rensselaer Polytechnic Institute, Troy, NY, USA.
Tholin sample deposited on silicon (Si) substrate. Film thickness of 30-40 nm.
The real part (n) of the complex index of refraction was determined from optical measurements done at room temperature, by spectroscopic ellipsometry from 0.4 to 0.75 µm.
More information can be found in the publication and on the OCdb contributor's page.
Any use of this data should recognize the parent publication(s):
Tran, B. N., Joseph, J. C., Ferris, J. P., Persans, P. D. and Chera, J. J. (2003) 'Simulation of Titan haze formation using a photochemical flow reactor: The optical constants of the polymer', Icarus, 165, pp. 379-390.