Gas Tholin From N₂:CH₄ (99:1) at 300 K
| Sample Type | Gas Tholin |
|---|---|
| Components | N₂:CH₄ |
| Ratio | 99:1 |
| Substrate | Si |
| Reference Temperature | 300 K |
| Wavenumber (cm⁻¹) | 10000 - 25000 |
| Wavelength (µm) | 0.4 - 1 |
Titan gas tholin sample produced from nitrogen:methane (N₂:CH₄ with a 99:1 ratio) gas precursors by RF plasma discharge at 300 K temperature and 0.9 mbar pressure in the PAMPRE experimental setup at Laboratoire ATMosphère Observations Spatiales (LATMOS), Guyancourt, France.
Tholin sample deposited on polished silicon (Si) substrate. Film thickness of ~630 nm, with roughness of 24 nm.
The real (n) and imaginary (k) parts of the complex index of refraction were determined from optical measurements done at room temperature, in ambient air, by spectroscopic ellipsometry from 0.4 to 1 µm.
More information can be found in the publication and on the OCdb contributor's page.
Any use of this data should recognize the parent publication(s):
Mahjoub, A., Carrasco, N., Dahoo, P.-R., Fleury, B., Gautier, T. and Cernogora, G. (2014) 'Effect of the Synthesis Temperature on the Optical Indices of Organic Materials Produced by N₂-CH₄ RF Plasma', Plasma Processes and Polymers, 11, pp. 409-417.