Gas Tholin From N₂:CH₄ (98:2) at 300 K
| Sample Type | Gas Tholin |
|---|---|
| Components | N₂:CH₄ |
| Ratio | 98:2 |
| Substrate | Si |
| Reference Temperature | 300 K |
| Wavenumber (cm⁻¹) | 10000 - 27027.027 |
| Wavelength (µm) | 0.37 - 1 |
Titan gas tholin sample produced from nitrogen:methane (N₂:CH₄ with a 98:2 ratio) gas precursors by RF plasma discharge at 300 K temperature and 0.9 mbar pressure in the PAMPRE experimental setup at Laboratoire ATMosphère Observations Spatiales (LATMOS), Guyancourt, France.
Tholin sample deposited on silicon (Si) substrate. Film thickness of ~770 nm.
The real (n) and imaginary (k) parts of the complex index of refraction were determined from optical measurements done at room temperature, in ambient air, by spectroscopic ellipsometry from 370 to 1000 nm.
More information can be found in the publication and on the OCdb contributor's page.
Any use of this data should recognize the parent publication(s):
Mahjoub, A., Carrasco, N., Dahoo, P.-R., Gautier, T., Szopa, C. and Cernogora, G. (2012) 'Influence of methane concentration on the optical indices of Titan's aerosols analogues', Icarus, 221, pp. 670-677.