Gas Tholin From N2:C2H4 (1:0.0003) at 297 K
| Sample Type | Gas Tholin |
|---|---|
| Components | N2:C2H4 |
| Ratio | 1:0.0003 |
| Substrate | SiO2 |
| Reference Temperature | 297 K |
| Wavenumber (cm⁻¹) | 4000 - 50000 |
| Wavelength (µm) | 0.2 - 2.5 |
Titan gas tholin sample produced from nitrogen:ethylene (N2:C2H4 with a 1:3.0E-4 ratio) gas precursors by UV photolysis at 297 K temperature and ~700 Torr pressure at Rensselaer Polytechnic Institute, Troy, NY, USA.
Tholin sample deposited on quartz (SiO2) substrate. Film thickness of 40-50 nm.
The real (n) and imaginary (k) parts of the complex index of refraction were determined from optical measurements done at room temperature, by reflection and transmission spectroscopy from 0.2 to 2.5 µm.
The accuracy of k is estimated at ±10% at 0.4 µm and ±75% at 0.8 µm.
More information can be found in the publication and on the OCdb contributor's page.
Any use of this data should recognize the parent publication(s):
Tran, B. N., Joseph, J. C., Ferris, J. P., Persans, P. D. and Chera, J. J. (2003) 'Simulation of Titan haze formation using a photochemical flow reactor: The optical constants of the polymer', Icarus, 165, pp. 379-390.